Перегляд за автором "Popov, V."

Сортувати за: Порядок: Результатів:

  • Activation technique of astrophysical photonuclear reaction rate measurements using bremsstrahlung 
    Semisalov, I.; Skakun, Ye.; Kasilov, V.; Popov, V. (Вопросы атомной науки и техники, 2014)
    Astrophysical simulation of natural abundance of p-nuclei needs knowledge of the enormous quality of photonuclear reaction rates which can be derived from the reaction integral yields. The applicability of the activation ...
  • AES and XPS characterization of TiN layers formed and modified by ion implantation 
    Melnik, V.; Popov, V.; Kruger, D.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy ...
  • Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix 
    Khatsevich, I.; Melnik, V.; Popov, V.; Romanyuk, B.; Fedulov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The results of experimental researches of photoluminescence (PL) spectra in Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures with high-temperature (1100 °C) and following low-temperature ...
  • Low-temperature growth of diamond films using supersonic DC arcjet 
    Romanyuk, A.; Gottler, H.; Popov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of ...
  • Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs 
    Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.; Popov, V.; Ilnitsky, M.; Lysenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one ...
  • Ultrasound effect on radiation damages in boron implanted silicon 
    Romanjuk, B.; Krüger, D.; Melnik, V.; Popov, V.; Olikh, Ya.; Soroka, V.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect ...